| 摘要 |
PURPOSE:To readily pattern a barrier metal film and to prevent an inactive film from forming on a low melting point metal film by forming an Au film on the low melting point metal film as a bump material. CONSTITUTION:An Ni/Cu/Ti film 4 of multilayers is formed as a metal barrier film on the entire semiconductor substrate 1. After the entire substrate 1 is covered with a resist film 5, the film is patterned, and the resist film on aluminum electrodes 2 is removed. Then, the film 4 is plated by plating technique to form a Pb/Sn film 6 and a thin Au film 7. Then, the entire film 5 is removed, and the film 4 is removed except a region for bonding the electrodes 2 to the film 6. Since the film 7 acts as a mask at this time, the step of positioning is eliminated. Since the film 6 is protected by the film 7, an inactive film is not formed on the surface. Then, it reflows at a predetermined temperature.
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