发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To remove plating to an unnecessary section, and to eliminate the need for inserting a spacer by coating sections except a region, to which a chip is brazed, with an insulating layer and electroplating the sections except the region and using said insulating layer for insulating a lead. CONSTITUTION:Resists 2 through a photo-process is formed to sections except a region, to which an IC chip 5 is brazed, on a heat sink 1 consisting of copper, etc., and a plating layer 3 composed of Ni, etc. is shaped, employing the resist 2 as a mask. The chip 5 is brazed onto the layer 3 by solder 4. Leads 6 are fixed onto the resist 2, and conductors 7 are bonded with the leads 6 and the chip 5. According to the method, the leads 6 can be fitted onto the heat sink 1 without performing plating to unnecessary sections and interposing spacers.
申请公布号 JPS62117334(A) 申请公布日期 1987.05.28
申请号 JP19850258132 申请日期 1985.11.18
申请人 FUJI ELECTRIC CO LTD 发明人 TSUCHIYA KAZUHIRO;KOMATSU YUKITETSU;SHIGETA YOSHIHIRO
分类号 H01L21/52;H01L21/58;H01L21/60 主分类号 H01L21/52
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