| 摘要 |
PURPOSE:To improve transfer efficiency of an emitter-base junction and the characteristics of a current amplification factor by ion implanting an emitter layer before growing a base layer. CONSTITUTION:Silicon is, for example, doped by an MBE method on a semi- insulating GaAs substrate 1, and an N<+> type GaAs subemitter layer 2 and an N-type Al0.3Ga0.7As emitter layer 3 are epitaxially grown. Be<+> ions are implanted by a selective implanting method of a converging ion beam by moving a position as required in the same apparatus. Be is, for example, doped on the layer 3 again by the MBE method to grown a P<+> type GaAs base layer 6 and an N-type GaAs collector layer 6. Be<+> ions are, for example, implanted again by a selective implanting method of a converging beam. In addition, tin is, for example, implanted to an emitter electrode contacting region 8. The substrate is removed out of the MBE apparatus, heat treated to activate an impurity. A collector electrode 9 and an emitter electrode 11 are, for example, arranged by gold germanium/gold, and a base electrode 10 is arranged, for example, with chromium/gold. Then, oxygen ions are then implanted to form a high resistance inactivated region 12.
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