| 摘要 |
PURPOSE:To prevent the characteristics of a P-N junction from deteriorating due to the side effects of a barrier metal by forming a barrier metal layer on an insulating film having a hole on a second conductivity type region, and providing metal wirings in contact with the second conductivity type region to prevent an improper contact from occurring due to the precipitation of a silicon. CONSTITUTION:A silicon oxide film 4 is accumulated on a silicon substrate 2, and a contacting hole 7 is formed by photolithography. A reverse conductivity type impurity to the substrate 2 is diffused to form an impurity diffused layer 3, the surface is lightly etched to deposit a barrier metal 6 by sputtering, and only the hole is removed by photolithography. Then, an aluminum 1 is deposited by sputtering, and patterned. When the barrier metal is provided under the aluminum in this manner, it prevents the excess aluminum from moving to the hole. Since the barrier metal is not directly provided in the hole, a stress due to the barrier metal and the invasion of the barrier metal to a P-N junction are not provided nor the characteristics of the P-N junction are deteriorated.
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