| 摘要 |
PURPOSE:To prevent a current drift phenomenon in a semiconductor device including a hetero junction, by providing the P-N junction at a position within an InGaAsP layer, spaced from the hetero junction interface at least by a distance corresponding to the diffusion length of carriers participating in surface recombination current. CONSTITUTION:A semiconductor device comprises at least a hetero junction of P-InP/InGaAsP. The P-N junction is provided within the InGaAsP layer and it is spaced from the hetero junction interface at least by a distance corresponding to the diffusion length of carriers participating in surface recombination current. Accordingly, current drift can be prevented in the semiconductor device such as InGaAsP/InP light-emitting diode or laser diode. |
