发明名称 SEMICONDUCTOR DIFFERENTIAL PRESSURE GAUGE
摘要 PURPOSE:To obtain a differential pressure gauge of simple constitution by providing a container equipped with a pressure receiving diaphragm where a pressure transmission medium is charged in recessed parts separated by a partition wall and a measuring means for the quantity of electricity flowing between semiconductors provided in the medium. CONSTITUTION:The semiconductors 6 and 7 are so constituted as to have the same electron density in an equal-temperature and equal-pressure environment. When those two semiconductors 6 and 7 are connected together through an ammeter, no current flows in the equal-temperature and equal-pressure environment. If, however, there is a difference between pressure PA and PB applied to pressure receiving diaphragms 2 and 3, the semiconductors 6 and 7 differ in electron density according to the differential pressure. A charge, therefore, moves through the ammeter 8 so as to equalize the semiconductors 6 and 7 in Fermi level, so the pressure difference is measured from the deflection on the ammeter 8. Then a protecting mechanism for excessive pressure need not be provided, so the structure is simplified.
申请公布号 JPS62115334(A) 申请公布日期 1987.05.27
申请号 JP19850255767 申请日期 1985.11.14
申请人 YOKOGAWA ELECTRIC CORP 发明人 KAWAI TAKASHI;YAMAGISHI HIDEAKI
分类号 G01L13/06 主分类号 G01L13/06
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