发明名称 |
Dopant gettering semiconductor processing by excimer laser |
摘要 |
A dopant gettering semiconductor processing technique is disclosed for selectively activating an otherwise benign reactant to remove dopant from a semiconductor wafer substrate. Excimer pulsed ultraviolet laser radiation is provided at a discrete designated pulsed wavelength corresponding to a discrete designated gettering excitation energy of the otherwise benign reactant photochemically breaking bonds of the reactant such that the reactant is photolytically activated to remove dopant from the substrate, without thermally driven pyrolytic reaction. The bonds of a reactant gas are photochemically broken to produce gettering agents reacting with the substrate to remove dopant by forming a gaseous compound liberated from the substrate and benign to and unactivated by the discrete designated wavelength of the excimer pulsed ultraviolet laser radiation.
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申请公布号 |
US4668304(A) |
申请公布日期 |
1987.05.26 |
申请号 |
US19850721552 |
申请日期 |
1985.04.10 |
申请人 |
EATON CORPORATION |
发明人 |
SCHACHAMEYER, STEVEN R.;BENJAMIN, JAMES A.;PARDEE, JOHN B.;HOPPIE, LYLE O.;SCHUTTEN, HERMAN P. |
分类号 |
H01L21/223;H01L21/268;H01L21/322;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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