发明名称 |
Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
摘要 |
A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.
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申请公布号 |
US4668365(A) |
申请公布日期 |
1987.05.26 |
申请号 |
US19840664657 |
申请日期 |
1984.10.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FOSTER, ROBERT;WANG, DAVID N.;SOMEKH, SASSON;MAYDAN, DAN |
分类号 |
C23C16/50;C23C16/04;C23C16/44;C23C16/455;C23C16/509;C23C16/517;H01J37/32;H01L21/203;H01L21/205;H01L21/31;(IPC1-7):C23C14/00 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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