| 摘要 |
PURPOSE:To improve the step coverage of an electrode wiring metal by smoothly correct the side wall of the hole of an insulating film by the sidewall obtained by entirely etching by RIE the first conductive film. CONSTITUTION:A substrate 11 is covered with an insulating film 14, and an electrode leading hole 15 is formed by RIE on a diffused layer 13. Then the entire surfaces of the hole 15 and the film 14 are covered with a tungsten film 16 (a first conductive film) in a thickness larger than that of the film 14. When the film 16 is entirely etched again by RIE in the thickness of the film, the film 16 remains only as side wall 16 a in the shape that corners are rounded at the sidewall of the film 14 of the hole 15, and the sidewall of the film 14 becomes smooth surface. Thereafter, the entire surfaces of the hole 15 and the film 14 are covered with Al-Si film 17 (a second conductive film).
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