| 摘要 |
PURPOSE:To obtain high-purity silicon carbide whisker having improved linearity in high yield, by heating a molded article silicon raw material having a specific SiO2 content and a reaction space volume and solid carbon in a hydrogen- containing atmosphere. CONSTITUTION:In a method for producing silicon carbide whisker having high purity and improved linearity by heating a solid silicon raw material containing SiO2 and a solid carbon raw material containing carbon in limited reaction space, (a) a molded article which is obtained by premolding the silicon raw material containing SiO2 into a given shape and has >=30wt% SiO2 content and 0.3-5.0cm3 reaction space volume based on 1cm<2> surface area of part exposed in the reaction space and (b) the solid carbon raw material are heated in a H2-containing atmosphere at >=140 deg.C to give the aimed silicon carbide whisker. In the production of the whisker, a reaction catalyst is preferably used. Iron, nickel, cobalt or their compounds are used as the reaction catalyst. |
