| 摘要 |
PURPOSE:To obtain a broad-band amplifier characterized by a compact configuration, a low cost and a constitution wherein a desired frequency band can be arbitrarily selected, by connecting a resistor and a Schottky diode between the drain and the gate of a field effect transistor in series, and providing connecting terminals which can be connected to the outside, at both terminal of said Schottky diode. CONSTITUTION:A negative feedback path is provided from the drain to the gate of a field effect transistor T1 through a resistor. A diode D1 is inserted between the drain and the gate for the purpose of DC blocking. The diode D1 is formed in a Schottky junction type. External terminals 1 and 4 are taken out from both ends of the diode. C2 can be added between the terminals. As a result, the size of the diode D1, i.e., the occupying area on the substrate, can be made small in this structure.
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