| 摘要 |
PURPOSE:To improve formation of film deposited on a substrate by providing a cylindrical substrate to between cylindrical electrodes arranged in double layers, introducing feed gas for depositing film, heating the space between the electrodes and the subtrate while impressing a high frequency voltage to the electrodes. CONSTITUTION:The whole body of a reaction vessel is evacuated to a predetermined degree of vacuum, and silane is introduced from a feeding port 6 through many holes of a first electrode 2. The introduced silane is allowed to pass the circumference of the cylindrical substrate 4 and discharged from a discharge port 7 through many holes of a second electrode 3. Then, the cylindrical electrodes 2, 3 and the substrate 4 are heated at ca. 150-300 deg.C by heaters 5 provided around the electrodes 2, 3, and a high frequency voltage is impressed to the electrodes 2, 3 with a high frequency power source. In this stage, the substrate 4 and the external wall of the reaction vessel 1 are grounded. Since the degree of vacuum of the space between the electrodes 2 and 3 is lower than the degree of vacuum of other part because of introduced feed gas, glow discharged is caused only between the electrodes 2, 3, and photoconductive amorphous silicon film is formed on the periphery of the substrate 4. |
