发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent aluminum wirings from being disconnected by subjecting the surface of the wirings except a portion in contact with an aluminum sub strate surface excepting necessary wirings to an anodic oxidation to increase corrosion resistance and preventing the aluminum from being locally reacted owing to fine impurity at the periphery of the wirings. CONSTITUTION:A method of forming an anodic oxidation film on the periphery of aluminum wirings except aluminum out of necessary aluminum wirings subjects aluminum to an anodic oxidation in oxalic acid (2COOH.H2)O) to form a porous L anodic oxidation film 2. Other method of forming the film 2 subjects aluminum to anodic oxidation in ABM solution [(NH4)2.O.8H2O+2 CH2OH] to form a nonporous anodic oxidation film 2. The film 2 formed in such a method has insulation and corrosion resistance.
申请公布号 JPS62109342(A) 申请公布日期 1987.05.20
申请号 JP19850250203 申请日期 1985.11.07
申请人 NEC CORP 发明人 YOSHIDA HISAO
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
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