| 摘要 |
PURPOSE:To obtain a photoelectric converter having a multilayer P-N structure relatively readily manufactured by normal semiconductor manufacturing steps and high conversion efficiency by providing a semiconductor substrate formed longitudinally with a plurality of junctions, a plurality of charge pickup electrodes extending longitudinally in the substrate, and an external leading electrodes. CONSTITUTION:A semiconductor substrate 100 having different conductivity type semiconductor layers 1-4 alternately provided and a plurality of junctions formed longitudinally, a plurality of charge pickup electrodes 5 extending in the substrate 100 for absorbing electrons and holes generated by a light through the junction, and external leading electrode connected in parallel with the electrodes 5 to be externally led are provided. The substrate 100 having P-type silicon semiconductors 1, 3 and N-type semiconductor layers 2, 4 alternately laminated to form 3 P-N multilayer structures, four charge pickup aluminum electrodes 5a-5d extending longitudinally in the substrate 100, P<+> type high impurity semiconductor layers 6a, 6c and N<+> type high impurity semiconductor layer layers 6b, 6d formed to alternately surround electrodes 5a-5d, and external leading electrode terminals (a), (b) are, for example, provided. |
