| 摘要 |
PURPOSE:To obtain the titled GaAs single crystal having excellent crystallinity by not growing the crystal after seeding and providing the retention time for more than specified hours to surely form an alpha-cristobalite phase on the surface of a quartz boat when the GaAs single crystal is produced by a boat growth method using the quartz boat. CONSTITUTION:In the production of the GaAs single crystal by using the quartz boat, the inner surface of the quartz boat is roughed, the GaAs melt in the quartz boat is brought into contact with a GaAs seed crystal, and then the temp. is kept at a temp. at which a crystal is never grown from the GaAs melt for >=8hr. Consequently, the alpha-cristobalite phase is formed on the inner surface of the quartz boat and then the GaAs melt is transformed into the grown single crystal by using the seed crystal. The wettability between the wall surface of the quartz boat and the GaAs melt is decreased by the formation of the alpha-cristobalite on the inner surface of the quartz boat and the crystallinity is improved.
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