| 摘要 |
PURPOSE:To inhibit the generation of dislocation-defects to an silicon island by forming the single crystal N-type silicon island onto the surface of a P-type silicon substrate, changing low-concentration and high-concentration P-type layers into porous silicon layers through anodizing treatment and converting the layers into porous silicon oxide film layers. CONSTITUTION:A high-concentration P-type layer 12 and a P-type layer 13 in concentration lower than the layer 12 are shaped on the surface side of a P-type silicon substrate 11. An N-type epitaxial layer and a desired single crystal N-type silicon island 14 are formed onto the surface of the substrate 11, and the layers 13 and 12 are turned into porous silicon layers 15, 16 through anodizing treatment. The density of the layer 16 is made comparatively large and the density of the layer 15 small. The layers 15, 16 are changed into porous silicon oxide film layers 17, 18 through thermal oxidation treatment, and the N-type silicon island 14 insulated and isolated by the layers 17, 18 is obtained. Accordingly, the porous silicon layers just under the island 14 have small density, thus inhibiting dislocations and defects generated in the island 14.
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