| 摘要 |
PURPOSE:To increase current driving-force by oxidizing an exposed semiconductor substrate and one part of a gate electrode and implanting the ions of an impurity to the semiconductor substrate, using the gate electrode and a nitride film as masks. CONSTITUTION:A gate electrode 13 is formed onto a P-type silicon substrate 11 through a gate oxide film 12, an silicon nitride film 14a is grown on the gate oxide film 12 and an silicon nitride film 14b on the gate electrode 13 respectively through an execution onto the whole surface of NH3 annealing, and the silicon nitride films 14a, 14b are removed through etching in predetermined thickness to expose the gate oxide film 2. The oxide film 12 is removed through selective etching to expose the surface of the substrate 11, thick oxide films 15 are grown under the ends of the gate electrode 13 and a thin oxide film 16 on other substrate 11, and an impurity is introduced to the substrate 11 to shape N<+> type source-drain regions 17, 18. The source-drain regions 17, 18 after ion implantation and annealing for forming the source-drain regions are shaped approximately in a self-alignment manner to the gate electrode 13. Accordingly, current driving-force can be increased.
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