| 摘要 |
PURPOSE:To form an arbitrary-shaped aluminum layer having excellent coating adaptability on a stepping by a method wherein, after a palladium layer having the desired pattern formed on the silicon substrate on the surface of which a thermally oxided film is formed, a pressure-reduced chemical vapor-phase growing method is performed on aluminum using tri-isobutyl aluminum as a source. CONSTITUTION:A palladium film 103 is deposited on a thermally oxided film 101 by performing an electron beam vapor-deposition method. A resist is coated on the palladium film 103, a pattern is transferred by performing an ordinary lithographic process, and the resist is partially removed. Then, the exposed part of the palladium film 103 is removed by performing a wet etching using qua regia, and the palladium film 103 is left only on the region where aluminum is expected to be coated. Then, using tri-isobutyl aluminum which is a kind of organic aluminum as a source, aluminum is deposited by performing a pressure-reduced chemical vapor-phase growing method, and aluminum film 104 is coated on the palladium film 103 only.
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