发明名称 MANUFACTURE OF SHROUD FOR SEMICONDUCTOR PRODUCTION
摘要 PURPOSE:To obtain excellent thermal conductivity and corrosion resistance against Ga by attaching a dispersion, in which ceramic particles as a dispersoid are dispersed uniformly into a dispersion medium, onto the inner surface of a cylindrical body for a shroud made of aluminum, a circumferential wall thereof has a cooling-fluid flowing section, and forming a ceramics film. CONSTITUTION:A cylindrical body for a shroud, a circumferential wall thereof has a cooling-fluid flowing section, is manufactured from an aluminum material, and a dispersion in which ceramics particles having particle size of 1mum consisting of SiO2 and TiO2 are dispersed equally into a dispersion medium composed of isopropyl alcohol, is sprayed against the inner surface of the cylindrical body for the shroud. The dispersion is heated and dried, thus shaping a ceramics film in thickness of 10mum. No corrosion by Ga is recognized as the result of the repetition of six cycles of the heat-cycle test of heating of 200 deg.CX24hr cooling for thirty min by liquid nitrogen after the attachment of 1g Ga onto the inner surface of the cylindrical body for the shroud.
申请公布号 JPS62101018(A) 申请公布日期 1987.05.11
申请号 JP19850242295 申请日期 1985.10.28
申请人 SHOWA ALUM CORP 发明人 KATO YUTAKA;ISOYAMA EIZO
分类号 H01L21/203;C30B23/08;H01L21/26 主分类号 H01L21/203
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