| 摘要 |
PURPOSE:To reduce an area occupied by a check pattern, and to improve the yield of a wafer by using an L shape or a cross as the polishing check pattern employed in the polishing process of a single crystal surface on the preparation of a substrate for an integrated circuit having dielectric isolating construction. CONSTITUTION:A polishing surface appears as shown in a dotted line on an L shaped or crossed polishing check pattern by polishing a polishing range 4 in the polishing process of a single crystal surface. Accordingly, polishing size checking L1-L4 of the waveforms of the dotted line can be monitored.
|
