| 摘要 |
PURPOSE:To obtain the photoconductive material which is capable of being produced with ease, and has a high resistance and excellent electrostatic chargeability, and has high photosensitive characteristics in ranges of a visible ray and a near infra-red ray by forming a blocking layer of an amorphous silicon or a microcrystalline silicon and a photoconductive layer of a laminating body composed of the N-type amorphous silicon contg. a hydrogen and the amorphous silicon respectively. CONSTITUTION:The blocking layer 103 composed of muC-Si or a-Si contg. the silicon atom as a base material and contg. the hydrogen atom and at least one or more atoms selected from a carbon, an oxygen and a nitrogen atoms, and the photoconductive layer 102 are laminated on a conductive substrate body 101 made of aluminium. Further, the photoconductive layer 102 is produced by laminating the N-type amorphous silicon a-Si layer 104 contg. the silicon atom as the base material and contg. the hydrogen atom, and the amorphous silicon layer 105 contg. the silicon atom as the base material and contg. the hydrogen atom and at least one or more atoms selected from the carbon, the oxygen and the nitrogen atoms so as to make thick the concentration of said atoms on the side of the substrate in a direction of the thickness of the layer. |
