发明名称 CU ALLOY LEAD MATERIAL FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain the titled lead material having high strength, superior heat resistance and superior reliability with respect to soldering by using a Cu alloy having a specified composition consisting of Fe, P, An, Mg and Cu. CONSTITUTION:A Cu alloy lead material for a semiconductor device having high strength, superior heat resistance and superior reliability with respect to soldering is obtd. by using a Cu alloy having a composition consisting of, by weight, 2-2.4% Fe, 0.001-0.1% P, 0.01-1% Zn, 0.001-0.1% Mg and the balance Cu with inevitable impurities. The lead material also has superior elongation, electric conductivity, suitability to stamping (blanking), etching and plating and superior adhesion to solder and shows superior performance as a lead material for a semiconductor device having a high degree of integration.
申请公布号 JPS6293325(A) 申请公布日期 1987.04.28
申请号 JP19850232559 申请日期 1985.10.18
申请人 MITSUBISHI SHINDO KK 发明人 FUTATSUKA RENSEI;KUMAGAI SEIJI;IZUMIDA MASUHIRO
分类号 H01L23/48;C22C9/00;H01L23/495 主分类号 H01L23/48
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