| 摘要 |
PURPOSE:To prevent the oxidation and water absorption of an amorphous semiconductor layer while protecting molten particles by a back electrode even when the molten particles scatter, and to obviate the lowering of film quantity in the working process of the amorphous semiconductor layer by laminating and forming a transparent electrode, the amorphous semiconductor layer and the back electrode onto a light- transmitting insulating substrate and simultaneously cutting and processing the electrodes and layers. CONSTITUTION:A transparent electrode 2, a PIN junction type of NIP junction type amorphous semiconductor layer 3 and a back electrode 4 are each laminated and shaped onto a light-transmitting insulating substrate 1 in required thickness in the order, and the transparent electrode 2, the amorphous semiconductor layer 3 and the back electrode 4 are scribed simultaneously by a laser at every region constituting respective photovoltaic element A, B, C.... Insulators 5 are formed into grooves shaped through cutting. The back electrode 4 and the amorphous semiconductor layer 3 are scribed by the laser at the same time from the back electrode 4 side on one side at slight intervals from each insulator 5. A connecting electrode 6 extending over the back electrode 4 and the laser-scribed and exposed transparent electrode 2 is formed while the connecting electrode 6 and the back electrode 4 are scribed by the laser. |
