| 摘要 |
PURPOSE:To obtain an FET element having an inexpensive material, a stable and long life and excellent electric characteristics by forming a semiconductor layer of pi-conjugated polymer having cyclic 5-member ring. CONSTITUTION:A pi-conjugated polymer having cyclic 5-member ring is used for a semiconductor layer 4. A P-type silicon and N-type silicon can be used also as a gate electrode 2 and a substrate 1. In this case, the substrate 1 can be omitted. At this time it is preferable to reduce the volumetric intrinsic resistivity of the P-type silicon or the N-type silicon than that of the pi-conjugated polymer having cyclic 5-member ring in practice. Further, a conductive organic polymer may be used as the gate electrode. |
