| 摘要 |
PURPOSE:To reduce a transfer error in pattern measurement in case of dry etching of a base semiconductor substrate or a film made of a different substance from of the substrate by using a resist pattern as a mask by using a negative far ultraviolet ray resist as a lower layer resist in PCM technique. CONSTITUTION:On an Si substrate 1, a polysilicon layer 2 is formed and on the polysilicon layer 2, a negative far ultraviolet ray resist material 3 is spread. After that, the substrate is subjected to a heat treatment using a convection type oven and a positive photoresist material 4 consisting of novolak resin is spread and a heat treatment on a heat plate is performed. Next, the photoresist material except openings is exposed followed by development and the resist material of the exposed part is removed. Furthermore, the overall surface of the substrate is irradiated with sufficiently parallel far ultraviolet rays. Next, the development is performed by using a mixed solvent of methyl ethyl and inpropyl alcohol and a pattern 4a composed of a photoresist material and a negative far ultraviolet ray resist material right under said pattern 4a are removed. Subsequently, a base polysilicon layer 2 is etched by using a pattern 3a as a mask. |
