| 摘要 |
PURPOSE:To obtain the titled body having an improved spectral sensitivity and an image quality over a broad wavelength range of from a visible ray to a near infra-red ray by constituting the photoconductive body from the 3 layer structure comprising the 1st layer made of a muc-Si, the 2nd layer made of a n-type a-Si and the 3rd layer made of an a-Si. CONSTITUTION:The photoconductive layer 25 is composed of the 3 layers structure comprising the 1st layer 25a made of the muc-Si having the high sensitivity over the long wavelength range, the 2nd layer 25b made of the n-type a-Si having the high sensitivity over the wavelength range of about 790nm, and the 3rd layer 25c made of the a-Si having the high sensitivity over the visible ray range. Thus, the photoconductive layer 25 has the high sensitivity over the broad wavelength range of from the visible ray to the near infra-red ray. The preventing layer 24a of the electric charge implantation is doped said layer with the boron (B) to make said layer to the n-type semiconductor and to give a positive charge to said layer. Further, said layer is doped with the carbon atom (C) so as to bury the unevenness of the surface of said layer. Thus, the adhesive property between said layer and the drum substrate 12 is improved, Thereby preventing a peeling of said layer, and the insulation property of the prescribed layer 24a is improved due to the inherent insulation property coming from the carbon itself. |
