Oxydic semiconductor film - on glass substrate by vapour deposition through coaxial nozzles

摘要

Oxydic semiconductor films are deposited on glass by mixing a metal halide vapour with an inert anhydrous carrier gas. This mixt. is mixed in close proximity to the glass surface with a gas contg. the water vapour needed for the oxidn. of the metal halide. The glass surface is kept at such a temp (400-420 degrees C) that a transparent oxydic semiconductor film is produced on it.