| 摘要 |
<p>A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate (31) on which a first insulation film (30) is formed, forming a first conductive layer (35) on the first insulation film (30), forming a hillock (36) on the first conductive layer (35), forming a second insulation film (35,38) on the structure, removing that portion of the second insulation film (37, 38), in self-align with the hillock (36), which is on the hillock (36), thereby forming a contact hole leading to the first conductive layer (35), and forming on the structure a second conductive layer (41) extending into the contact hole and contacting the first conductive layer (35).</p> |
