Semiconductor photoelectric transducer

摘要

The present invention relates to a semiconductor FET or SIT type photoelectric transducer comprising a source and a drain which are main electrode regions of high impurity density; a high resistivity or intrinsic semiconductor region of the same conductivity type as the main electrode regions and formed therebetween as a current path; and a plurality of gate regions formed by high impurity density regions reverse in conductivity from the main electrode regions and formed in the current path, for controlling a main current; wherein the distance W1 between a first one of the gate regions on both sides of the source and the source or the drain is greater than the distance W2 between the other gate region and the source or drain (W1>W2), and wherein the size of the first gate region is smaller than the diffusion length of carriers to be stored in the first gate region. Briefly stated, the present invention is intended to enhance the function of the first gate by selecting the size of the first gate region for storing optical information within the diffusion length of the carriers stored therein, in addition to the selection of the aforementioned distances W1 and W2.