发明名称 Fault transparent magnetic bubble memory
摘要 The disclosed fault transparent bubble memory has a plurality of minor loops for storing magnetic bubbles, a serial-parallel input path for writing bubbles into the minor loops, and a parallel-serial output path for reading bubbles from the minor loops. Between the parallel inputs and parallel outputs of the minor loops lie pairs of bubble propagation elements. Each element propagates the bubbles by a single predetermined distance. Lying between each pair of these propagation elements is a shorting bar. It converts a pair of single distance propagation elements into one double distance propagation element. Defective minor loops are made transparent by selectively destroying those shorting bars that lie between fault-free minor loops. This selective destruction preferably is performed by a laser beam.
申请公布号 US4233670(A) 申请公布日期 1980.11.11
申请号 US19780968172 申请日期 1978.12.11
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 REYLING, JR., GEORGE F.
分类号 G11C19/08;G11C29/00;(IPC1-7):G11C19/08 主分类号 G11C19/08
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