| 摘要 |
PURPOSE:To increase bond strength between electrodes by a method wherein protrusions are created in projecting electrodes and the protrusions are caused to engage with each other for the coupling of two electrodes. CONSTITUTION:Electrodes 6 rise several micrometers from the surface of protecting films 5. They are so structured as to ensure a firm and reliable bond, provided with meshes of protrusions and recesses. The protrusion-provided electrodes 6 of semiconductor devices A and B are so caused to abut against each other that a protrusion 61 may engage with a recess 62. The combination of the protrusion 61 and recess 62 is collapsed for a firm bond. That is to say, an electrode 6 rising from the surface of a protecting film 5 furnished for the protection and insulation of a semiconductor device is provided with protrusions and recesses that engage with each other for the establishment of a firm bond between electrodes 6 when protrusions 61 mesh with recesses 62. This ensures a good bond. |
