DEVICE FOR VAPOR DEPOSITION OF THIN FILM

摘要

PURPOSE:To obtain the thin film vapor deposition device without an increase in temperature of a substrate by containing a normal temperature gas in a gas substance container composing a cluster ion beam vapor deposition device and irradiating the gas with a beam through a wall of the container to change a part of clusters generated from the container into excited clusters. CONSTITUTION:A communicating pipe from a gas container 32 containing a compound gas 31 penetrates through a bottom plate of a vacuum tank 1 having an exhaust path 2 at the bottom and a container 30 for the gas 31 having a nozzle 30a on its top is connected with the front end of said communicating pipe. Also a valve 33 for controlling a flow of the gas 31 and an internal pressure of the container 30 is arranged between the container 32 and the container 30. A cooling pipe 34 for controlling the size of cluster is wound around a periphery of the container 30. Next, a substrate 18 supported by an insulating support member 21 is arranged oppositely above the nozzle 30a. A laser beam 36 is projected from a laser oscillator 35 onto the container 30 through a wall of the container. Thus a part of the clusters 15 jetted out from the nozzle 30a are changed into excited clusters 46 and are bombarded against the substrate 18.