| 摘要 |
PURPOSE:To improve characteristics relating to recording, erasing and reproducing of information by forming an average compsn. of a thin film in the film thickness direction into a combination of Se and Te selected from two kinds of element groups. CONSTITUTION:The average compsn. of the thin film for information recording formed on the substrate in the film thickness direction thereof is specified to the range expressed by the general formula: AxBySexTe. In the formula, A is the element of B and >=1 kinds of the elements selected except from Se and Te, B is >=1 kinds of the elements selected from the Sn and Pb groups. x, y, z, alpha are 0<=x<30, 10<=y<=70, 30<=z<=80, 0<=alpha<30 by atomic %. >=1 Kinds among Zn, Cd, C, Ti, Ni, etc. are selected for the elements expressed by A. The thin film for information recording has a high crystallization temp., high sensitivity and excellent stability. |
