| 摘要 |
PURPOSE:To improve the luminous efficiency and the life by forming the clad layer being in close contact with an active layer of double hetero junction semiconductor formed on a GaAs substrate out of superlattice in which thin films of AlAsP and GaAs are multi-laminated. CONSTITUTION:Clad layers 22 and 24 holding a GaAs active layer 23 from both sides are formed of superlattice on a GaAs substrate 21. A P-side superlattice clad layer 24 is formed of superlattice in which an AlAsP layer including P type impurity and a non-doped GaAs layer are laminated and an N-side superlattice clad layer 22 is formed of the superlattice in which an AlAs layer including N type impurity and a non-dooped GaAs layer. In such superlattice, the impurity which determines a conductive type is separated from Ga atoms spatially so that the non-luminous recombination center composed of a composite structure of Ga and the impurity is substantially reduced and the carriers exuded from the active layer 23 are also luminous-recombined thereby improving the luminous efficiency. |
