| 摘要 |
PURPOSE:To reduce photoresist processes and realize high integrity by compos ing parts of intra-cell wirings, the first potential wiring, the second potential wiring and a word line wiring of an identical wiring layer. CONSTITUTION:After a p-type well 3 is formed on a substrate 1, an isolation oxide film 5 and source and drain n<+> type layers 6 are formed. Then the first layer polycrystalline Si is deposited to form the insulating gate electrode 8 of a transferring transistor Q3, the gate electrode 9 of a driving transistor Q2 and a word line W. Then, afte a layer insulating film (not shown) is formed, the second layer polycrystalline Si high resistance resistor 10 (R) is formed. After an intermediate layer film and through holes (not shown) are formed, Al is evaporated to form the first layer Al wiring composed of intra-cell wirings 13 and 14, a word line wiring and a power source wiring 15. Finally, the second layer Al wiring 12 is formed. With this constitution, photoresist processes can be reduced. |
