| 摘要 |
PURPOSE:To allow uniform heat-treatment by a method wherein a thin film whose light absorption factor differs from that of the substrate is selectively formed on a substrate, and is irradiated with incoherent light. CONSTITUTION:Incoherent light, for example, light of halogen lamp is used as a heat source for heat treatment, and the surface of a semiconductor substrate 1 such as Si is irradiated with the light. A thin film (example: thin film 2a and 2b) consisting of Si oxide whose light absorption factor differs from that of the substrate 1 is selectively formed on the substrate 1 to reduce thermal loss in the surroundings of the substrate 1. With thin configuration, the thermal loss in the surroundings where thermal gradient is produced is compensated by means of the difference in temperature between the region where the thin film is formed and another region due to the light irradiation, with the result that the substrate is uniformly heated, thereby preventing the generation of thermal stress. |
