| 摘要 |
PURPOSE:To perform a drum having static capacity as conventionally irrespective of the reduction in size of a unit cell by forming by a high step stacking method, forming an insulating layer formed on a gate electrode bulky to be used as the surface area of the capacitor. CONSTITUTION:After an insulating layer is formed much thickly to become several mum as compared with conventional one by including a gate electrode 6 patterned on an insulating film 8, it is etched to a semiconductor region 7 or a separating layer 7 between the elements except the electrode 6, and an interlayer insulating layer 15 is patterned on the region of the electrode 6. Then, a crystalline insulating layer 16 is selectively grown by an aqueous soluble boride to the height of the layer 15. Then, an insulator 17 is coated and buried in the window by a spin coating method. Then, the excess resist is removed, the layer 16 is removed by dissolving to forms a recess by opening a window on the region 7, and a unit cell of the DRAM is completed in the recess. |
