| 摘要 |
PURPOSE:To increase the effective amount of incident light and improve photoelectric conversion efficiency significantly by laminating a transparent electrode, the first amorphous semiconductor layer which has n-type semiconductor characteristics, the second amorphous semiconductor layer which has i-type semiconductor characteristics and a metal electrode. CONSTITUTION:A transparent electrode 102 made of ITO, n-type and i-type layers 103 and 104 obtained by glow discharge decomposition and a metal electrode 105 made of Cr are successively formed on a transparent substrate 101 such as glass. The n-type layer 103 has ohmic contact with the transparent electrode 102. In the junction of the metal electrode 105 and the i-type layer 104, a Schottky barrier is formed and a depletion layer is spread in the i-type layer 104 by the bend of energy band of the i-type layer 104. The light is transmitted through the transparent substrate 101 and the transparent electrode 102 and absorbed in the n-type layer 103 and the i-type layer 104 by exciting carriers. Among the excited carriers, positive holes are transferred to the metal electrode 105 and electrons are transferred to the n-type layer 103 so that a photovoltage is induced. |
