| 摘要 |
PURPOSE:To reduce an applied voltage for writing and to alleviate the condition of the thickness of an insulating layer by interposing a semiconductor charge storage layer between insulating films which vary an energy gap as thickness. CONSTITUTION:This memory element has a structure that an insulating layer 1 which is varied at X of a-Si1-XHX film in a range of 0<=X<0.7 is grown approx. 100nm by a plasma CVD method or a light CVD method on an n-type Si substrate 6, a Ge film 7, an a-Si1-XHX film 1, and an electrode 2 are sequentially laminated thereon. Since the potential barrier of the film 1 continuously varies as the value of the X, a charge implanting speed can be controlled, and this means that, even if the controllability of the insulating film thickness is deteriorated, if the composition of the film is gradually varied, the charge implantation can be performed by the slight variation of an applied voltage. A writing can be performed at a lower voltage than that of the conventional one. |
