| 摘要 |
PURPOSE:To enable the improvement in photoelectric conversion efficiency by improving a short photocurrent and a curve factor by forming a P-type semiconductor thin film layer as nearly a protective layer on a base layer firstly by thermal decomposition technique. CONSTITUTION:After a P-type semiconductor thin film layer of 10-200Angstrom is formed by the thermal decomposition of a mixed gas of a large degree silane gas SinH2n+2 (n is an integer as n>=2) and diborane, a P-type semiconductor layer is formed on the thin film by glow discharge decomposition of a mixed gas of a silane group gas and a III-hydride which is capable of formation of the P-type semiconductor layer. The large-degree silane is, e.g., disilane, trisilane, tetrasilane and etc., and the dilluting concentration is not specified, but usually 50% or more is preferable. Also, the III-hydride as a dopant for giving a P-type conductivity, more particularly diborane is dilluted generally in consideration of its toxicity by using H2 or an inert gas such as He, Ar and the 100ppm-10% concentration is preferable for use. A quantity of addition of diborane into silane is most preferably 1X10<-3>-0.01 of B/Si atomic ratio according to the characteristics of the P-type semiconductor film obtained by thermal decomposition. |
