| 摘要 |
PURPOSE: To improve the rigidity of an interlayer insulating film, for which a low dielectric constant film is used, without giving an adverse effect on the reliability of a semiconductor device. CONSTITUTION: An interlayer insulating film 13 is formed by covering the circumference of the wiring 42 provided on a semiconductor device, and the interlayer insulating film 13 consists of the first to the fourth low dielectric constant films 21 to 24, having the dielectric constant 1 to 3.5, formed on the circumference of the wiring 42 and between wirings 42, and the supporting layers (first and second supporting layers 31 and 32) formed in a low dielectric constant film among the first and the second low dielectric constant films 21 and 22 located on the upper and the lower parts of the wiring 42 and the fourth low dielectric constant films 23 and 24, or the supporting layers (first and second supporting layers 31 and 32). |
