发明名称 AN APPARATUS FOR MOLECULAR BEAM EPITAXY
摘要 <p>An apparatus for molecular beam epitaxy according to the present invention is so constructed that a substrate is introduced into a vacuum vessel with a substrate surface for epitaxial growth facing in the direction of gravity, and that the substrate is conveyed to and transferred into vacuum chambers for performing processes necessary for the epitaxial growth, with the substrate surface maintained in the direction of gravity and without directly touching the substrate surface.</p>
申请公布号 EP0132538(B1) 申请公布日期 1987.02.11
申请号 EP19840106138 申请日期 1984.05.29
申请人 HITACHI, LTD. 发明人 SATO, KAZUO;YAMAGUCHI, SUMIO;KATO, SHIGEO;MATSUMURA, YASUHIDE;MIZUMOTO, MUNEO;OKUNO, SUMIO;TAMURA, NAOYUKI
分类号 C30B23/02;C30B35/00;H01L21/203;(IPC1-7):C30B23/02 主分类号 C30B23/02
代理机构 代理人
主权项
地址