| 摘要 |
PURPOSE:To localize floating gate electrodes above the channels between source regions and drain regions by a method wherein grooves for element isolation are formed self-aligning with the floating gate electrodes and the floating gate electrodes are formed self-aligning with a control gate electrode. CONSTITUTION:Floating gate electrodes 3 are formed self-aligning with a control gate electrode 10 at the end parts of source and drain regions 11 and 12 and self-aligning with groove 5 for element isolation at the end parts of channels between the source regions 11 and the drain regions 12. As the elements are isolated by the grooves 5 and 8, the size of a nonvolatile semiconductor memory device can be reduced. Moreover, as the source is kept at a constant potential during the writing in and reading out of a selected memory cell, a leakage current between the source and the drain can be avoided. |
