| 摘要 |
A semiconductor device comprising a semiconductor substrate of an N conductivity type; an insulation layer of a predetermined pattern for selectively covering the substrate; a first region of a P conductivity type formed in that area of the substrate which is surrounded by the insulation layer; a second region of the P+ conductivity type having a high impurity concentration and formed in the first region; a third region of the N conductivity type formed in the first region; a polycrystalline silicon layer formed on the major surface of the substrate, said polycrystalline silicon layer comprising a first portion of the P conductivity type contacting the second region, a second portion of the N conductivity type contacting the third region and a third portion contacting the first region, said first and second portions constituting first and second contacting electrodes, respectively, and the third portion having a predetermined impurity concentration and constituting a separation portion for insulating the first and second portions from each other. |
