发明名称 Method for fabricating sputtering targets
摘要 A method is provided for fabricating aluminum alloy sputtering targets having fine precipitates of a second phase material in small, randomly oriented and uniform grains. The method provided includes the steps of homogenizing the aluminum alloy billet at a temperature above the solidus temperature, deforming the billet, recrystallizing the billet at a temperature below the solidus temperature, and cryogenically deforming the billet. This minimizes second-phase precipitate size and prevents the formation of cubic structures, thereby generating fine uniform grain sizes having random orientation.
申请公布号 AU4997597(A) 申请公布日期 1998.05.29
申请号 AU19970049975 申请日期 1997.10.27
申请人 SONY CORPORATION 发明人 CHI-FUNG LO;DARRYL DRAPER
分类号 C22F1/04;C23C14/34 主分类号 C22F1/04
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