发明名称 |
Ion implantation apparatus and method for maskless processing |
摘要 |
This invention relates to an ion implantation apparatus and method for maskless processing of substrate, and more particularly, to form ion implanted pattern by selectively scanning a focused ion beam on the surface of a processing substrate. The timing of the apparatus is controlled by a variable frequency clock pulse. By using the variable frequency oscillator, a clock frequency can be controlled continuously. So, the ion implantation pattern is easily controlled by the clock frequency and scanning number with high accuracy compared to a prior art.
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申请公布号 |
US4641034(A) |
申请公布日期 |
1987.02.03 |
申请号 |
US19840687225 |
申请日期 |
1984.12.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
OKAMURA, SHIGERU;TAGUCHI, TAKAO |
分类号 |
B01J19/08;H01J37/304;H01J37/317;H01L21/265;(IPC1-7):G01N23/00 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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