| 摘要 |
PURPOSE:To improve moisture resistance, by coating at least a part of the surface of Ga1-xAlxAs layer with a silicon oxide film. CONSTITUTION:On a P-type (100) GaAs substrate 1, a Zn doped P-type Ga1-xAlxAs layer 2 and a Te doped N-type Ga1-xAlxAs layer 3 with a thickness of 30mum are continuously formed. After an N-side electrode 4 is formed, a mesa groove 5 is formed, with a suitable oxide film as a mask. Thereafter, the oxide film is once removed. Then an SiO2 film 6 is formed again. Thus the surface is coated with a silicon oxide film with a thickness of 200-5,000Angstrom . The forming temperature of the silicon oxide film is made sufficiently low (<450 deg.C). Thus a GaAlAs light emitting element characterized by excellent moisture resistance and highmass productivity can be obtained. |
