| 摘要 |
PURPOSE:To eliminate the exposure nonuniformity due to multiple reflection by setting the thickness of a photoresist so as to be the conditions of a low reflectance and with respect to the wavelength of an exposure light source, polarization and an incident angle. CONSTITUTION:The reflectance depends upon the film thickness of the photo resist, and therefore said thickness is set within a scope where the reflectance can be low. As the reflectance of an exposing light beam in the photoresist varies in accordance with the thickness of the photoresist, the multiple reflection can be suppressed by setting the film thickness of the photoresist to a value within the area with a low reflectance. The film thickness of the photoresist is not suitable when it is too thin or too thick, and an optimum film thickness is selected in accordance with the type of products to be exposed. |
