| 摘要 |
PURPOSE:To obtain a TFT, which can be operated at a high speed, by making the resistance of a low resistance semiconductor thin film itself low, reducing the contact resistance with a high resistance semiconductor thin film, and forming source and drain electrodes in self-aligning manner with respect to a gate electrode. CONSTITUTION:On a transparent insulating substrate 1, a gate electrode of an opaque conducting film is formed. Thereafter, a gate insulating film 3, a high resistance semiconductor thin film 4, a low resistance semiconductor thin film 10, a first mask film 30 and a second mask film 40 are sequentially deposited. The second and first mask films are patterned with the exposure to light from the surface of the substrate. The second mask film 40 has an overhung shape against the first mask film 30. Then, a first conducting film 20 is deposited. The first and second mask films are removed, and the first conducting film 20 is patterned. The exposed low resistance semiconductor film 10 is removed. A source electrode 5 and a drain electrode 6 are formed by self-aligning manner. |
