| 摘要 |
PURPOSE:To obtain a high density composite semiconductor element having high reverse blocking voltage, self-extinguishing function and utilizing the features by connecting a diode and a transistor in series. CONSTITUTION:A transistor T has self-extinguishing function, but since it generally has very low reverse blocking voltage characteristics as shown by a solid line curve 1, it cannot be used for a circuit for generating a reverse voltage. The reverse blocking voltage characteristic like a diode S is increased as shown by a broken line curve 2, but does not have a self-extinguishing function. Thus, two eleements are connected in series by connecting two chips formed of elements having different characteristics and functions to obtain a high density composite semiconductor element which has high reverse blocking voltage and a self-extinguishing function and utilizing the features as shown in Fig. (C). |
